A research team led by the School of Engineering of The Hong Kong University of Science and Technology (HKUST) has made significant advances in quantum rod light-emitting diodes (QR-LEDs), setting record-high efficiency level for red QR-LEDs. This innovation is poised to revolutionize next-generation display and lighting technologies, offering smartphone and television users a vibrant and enhanced visual experience. The research is published in the journal Advanced Materials.
Revolutionizing LED Technology
LEDs have been widely used in electronic products for decades. Recent developments in quantum materials have given rise to quantum dot LEDs (QD-LEDs) and QR-LEDs. QD-LEDs offer superior color purity (color vividness) and higher brightness compared to current mainstream LEDs. However, outcoupling efficiency has now become the primary obstacle, as it sets a fundamental ceiling for external quantum efficiency (EQE), thereby hindering any further performance improvements.
Overcoming Technical Challenges
Quantum rods, on which QR-LEDs are based, are a type of elongated anisotropic nanocrystals with unique optical properties that can be engineered to optimize the light emission direction and ultimately improve outcoupling efficiency. However, QR-LEDs encounter two significant technical challenges: first, the ratio of emitted to absorbed photons (photoluminescence quantum yield) is relatively low after the material absorbs photons; second, there is a substantial leakage current due to poor thin-film quality.
To address these challenges, a research team led by Prof. Abhishek K. Srivastava, Associate Professor of the Department of Electronic and Computer Engineering (ECE), focused on boosting optical performance of QR-LEDs via refined synthesis engineering. They achieved an excellent photoluminescence quantum yield of up to 92% for both green and red quantum rods, along with uniform size distribution and shape confinement, all of which are essential for optimizing QR-LED performance.
Breakthrough Results
In previous studies, the carrier leakage caused by irregular quantum rod films and its impact on diminishing the light coupling efficiency of QR-LEDs has often been overlooked. To tackle this issue, the team built an equivalent circuit model that illustrates the detrimental effects of leakage current in traditional QR-LED structures.
This model provided valuable insights into the deviceās operation, enabling the formulation of targeted solutions to suppress current leakage. By strategically transforming the QR-LED device structure, the team achieved a dual breakthrough: simultaneously enhancing balanced carrier injections and suppressing leakage current.
The results were remarkableāthe optimized red QR-LEDs achieved a peak EQE of 31% and a peak brightness of 110,000 cd mā»Ā², setting a new record in previous red QR-LED research. Moreover, to validate the universality of their strategies, the team applied the same approach to green ādot-in-rodā quantum rods.
The green devices also yielded impressive results, reaching a peak EQE of 20.2% and an ultra-high luminance of 250,000 cd mā»Ā². These outcomes not only demonstrate the effectiveness of the innovations but also highlight their potential for application across different color variants of QR-LEDs.
Prof. Srivastava, the corresponding author of the study, remarked, āPrevious QD-LED research primarily focused on optimizing quantum dot structures for high efficiency, but this approach does not apply to elongated shaped quantum rods, such as QR-LED.
āBy utilizing equivalent circuit models and quantum rod micromorphology, we revealed that QR-LEDs have widespread pinholes due to their shape, which leads to critical leakage currentsāan issue not encountered in tightly packed QD-LEDs. By modifying the device structure, we addressed the quality issues in the emissive layer and verified the fundamental advantages of quantum rods over quantum dots. This work is set to guide research on similar anisotropic nanocrystals and advance their commercial applications.ā
Conclusion
The research conducted by the HKUST team represents a significant leap forward in QR-LED technology, paving the way for enhanced display color and brightness in electronic devices. With their groundbreaking results and innovative approach, the team has set a new efficiency standard that has the potential to reshape the future of LED technology.
More information:
Zebing Liao et al, Inverted Device Engineering for Efficient and Bright Quantum Rod LEDs, Advanced Materials (2025). DOI: 10.1002/adma.202504559