In a world first, they used two-dimensional (2D) materials, which are only an atom thick and retain their properties at that scale, unlike silicon, to develop a computer capable of simple operations.
The development, published in Nature, represents a major leap toward the realization of thinner, faster and more energy-efficient electronics, the researchers said.
They created a complementary metal-oxide semiconductor (CMOS) computer—technology at the heart of nearly every modern electronic device—without relying on silicon.
Instead, they used two different 2D materials to develop both types of transistors needed to control the electric current flow in CMOS computers: molybdenum disulfide for n-type transistors and tungsten diselenide for p-type transistors.
“Silicon has driven remarkable advances in electronics for decades by enabling continuous miniaturization of field-effect transistors (FETs),” said Saptarshi Das, the Ackley Professor of Engineering and professor of engineering science and mechanics at Penn State, who led the research. FETs control current flow using an electric field, which is produced when a voltage is applied.
