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Silicon Flash > Blog > Innovations > Unlocking the Potential: How Atomic Neighborhoods in Semiconductors are Revolutionizing Microelectronics Design
Innovations

Unlocking the Potential: How Atomic Neighborhoods in Semiconductors are Revolutionizing Microelectronics Design

Published September 27, 2025 By Juwan Chacko
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Unlocking the Potential: How Atomic Neighborhoods in Semiconductors are Revolutionizing Microelectronics Design
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Inside the inner workings of the microchips that power the device you are currently using, there exists a hidden order of atoms. A recent study led by Lawrence Berkeley National Laboratory and George Washington University has uncovered that atoms in semiconductors organize themselves into distinct localized patterns, impacting the material’s electronic properties.

Unveiling the Atomic Neighborhoods in Semiconductors

The study, recently published in the journal Science, has significant implications for the design of specialized semiconductors for quantum computing and optoelectronic devices used in defense technologies.

Decoding the Atomic Structure of Semiconductors

At the atomic level, semiconductors are crystalline structures composed of various elements arranged in repetitive lattice formations. While most semiconductors are primarily made of one dominant element with small additions of others, the specific arrangement of these atoms in relation to their neighboring atoms has long been a puzzle.

The research team aimed to investigate whether these additional elements randomly distribute among the dominant atoms during material synthesis or if they exhibit preferred arrangements, known as short-range order (SRO). Previous microscopy techniques were unable to provide a clear enough view to directly observe and interpret the SRO in tiny regions of the crystal structure.

Co-lead author Andrew Minor, from Berkeley Lab, explains, “SRO significantly influences a material’s properties. While our colleagues had theorized the presence of SRO in semiconductors, this is the first experimental demonstration of the individual structure of these SRO domains.”

Revolutionizing Semiconductor Design

The breakthrough in the study came when Lilian Vogl, the first author and a postdoctoral researcher, utilized advanced electron microscopy techniques to observe a sample of germanium with traces of tin and silicon. By employing innovative imaging methods, Vogl uncovered distinct patterns indicating that the atoms exhibit preferred ordering.

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To further analyze and understand these patterns, Vogl collaborated with researchers at George Washington University to develop a machine-learning model capable of simulating various structural arrangements in the material. This collaboration allowed the team to decode the structural motifs responsible for the observed atomic ordering accurately.

The implications of this research extend beyond fundamental science, as it opens up new possibilities for designing semiconductors at the atomic scale. The ability to manipulate atomic ordering could lead to the development of novel electronic devices with enhanced performance and efficiency.

Future Prospects in Semiconductor Technology

Continued research by the team at the University of Arkansas and Sandia National Laboratories aims to explore the impact of these short-range order motifs on the electronic properties of semiconductors. By harnessing the power of precise atomic manipulation, the scientists envision a future where tailored band structures enable a wide range of technological advancements, from quantum materials to optical detectors.

More information:
Lilian M. Vogl et al, Identification of short-range ordering motifs in semiconductors, Science (2025). DOI: 10.1126/science.adu0719

Provided by: Lawrence Berkeley National Laboratory

TAGGED: Atomic, Design, Microelectronics, Neighborhoods, potential, revolutionizing, semiconductors, Unlocking
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